Dielectric Engineered Tunnel Field-Effect Transistor
نویسندگان
چکیده
منابع مشابه
Performance Analysis of Double Hetero-gate Tunnel Field Effect Transistor
A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...
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Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2015
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2015.2474147